![]() The reduction in fill factor imposed by the presence of the shift registers can be compensated for by microlenses to improve sensitivity. The charge is moved to the vertical shift registers in one step before reaching the horizontal readout register and being clocked into the output amplifier, pixel by pixel. Instead of shifting the charge through the light sensitive pixels, it is moved into a shielded shift register situated next to each line of pixels. In addition to light sensitive pixels, interline transfer (ILT) sensors include vertical shift registers. The capacity per pixel is then read out following several sensor read out techniques that are described in the following: The accumulated capacity is proportional to the amount of the incident light and the exposure time. ![]() During the integration phase (exposure time) all electrons released by the incoming light at the semiconductor-oxide interface are accumulated in a potential well.
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